FQT1N60C n-channel mosfet ?2007 fairchild semiconductor corporation FQT1N60C rev. c0 www.fairchildsemi.com 1 d g s sot-223 g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FQT1N60C unit v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 0.2 a -continuous (t c = 100 o c) 0.12 i dm d r a i n c u r r e n t - p u l s e d (note 1) 0.8 a e as single pulsed avalanche energy (note 2) 33 mj i ar avalanche current (note 1) 0.2 a e ar repetitive avalanche energy (note 1) 0.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 2.1 w - derate above 25 o c0 . 0 2 w / o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter min. max. unit r ja thermal resistance, junction to ambient* - 60 o c/w * when mounted on the minimum pad size recommended (pcb mount) march 2013 FQT1N60C features this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. ? 0.2 a, 600 v, r ds(on) =9.3 ?( 7 \ s.)@v gs =10 v, i d =0.1 a ? low gate charge (typ. nc) ? low c rss (typ. pf) ? 100% avalanche tested n-channel qf et ? mosfet 600v, 0.2 a, 11.5 ? description ? rohs compliant
FQT1N60C n-channel mosfet www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FQT1N60C FQT1N60C sot-223 330mm 12mm 4000 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 600 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 25 a v ds = 480v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2 . 0-4 . 0v r ds(on) static drain to source on resistance v gs = 10v, i d = 0.1a - 9.3 11.5 ? g fs forward transconductance v ds = 40v, i d = 0.1a (note 4) -0.75- s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 130 170 pf c oss output capacitance - 19 25 pf c rss reverse transfer capacitance - 3.5 6 pf q g total gate charge at 10v v ds = 480v, i d = 1a v gs = 10v (note 4, 5) -4.86.2nc q gs gate to source gate charge - 0.7 - nc q gd gate to drain ?miller? charge - 2.7 - nc t d(on) turn-on delay time v dd = 300v, i d = 1a r g = 25? (note 4, 5) - 7 24 ns t r turn-on rise time - 21 52 ns t d(off) turn-off delay time - 13 36 ns t f turn-off fall time - 27 64 ns i s maximum continuous drain to source diode forward current - - 0.2 a i sm maximum pulsed drain to source diode forward current - - 0.8 a v sd drain to source diode forward voltage v gs = 0v, i sd = 0.2a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 1a di f /dt = 100a/ s (note 4) - 190 - ns q rr reverse recovery charge - 0.53 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 59mh, i as = 1.1a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 0.2a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics ?200 7 fair child se m i cond u ct o r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2 . t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.00.51.01.52.02.5 0 5 10 15 20 25 30 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 150 ? notes : ? 1. v gs = 0v 2 . 2 50 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0123456 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 1a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 50 100 150 200 250 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] ?200 7 fair child se m i cond u ct o r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperatur e figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1 . v gs = 0 v 2 . i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 0.1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 i d , drain current [a] t c , case temperature [ c] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 100 ms 1 ms 1 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : ? 1 . t c = 25 o c 2 . t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 n otes : ? 1. z jc (t) = 60 /w m ax. ? 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 ?200 7 fair child se m i cond u ct o r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms ? 2 0 07 f a i rc h i l d semico n duc to r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period -------------------------- ? 2 0 07 f a i rc h i l d semico n duc to r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 7 mechanical dimensions 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1 .60 0.20 (0.46) (0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0~10 +0.10 ?.05 0.06 +0.04 ?.02 sot-223 ?200 7 fair child se m i cond u ct o r cor p o rat i o n f q t 1 n60 c rev . c0
FQT1N60C n-channel mosfet www.fairchildsemi.com 8 ?200 7 fair child se m i cond u ct o r cor p o rat i o n f q t 1 n60 c rev . c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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